? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c 600 a v ge = 0 v t j = 125 c 5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 50 a, v ge = 15 v 1.1 1.4 v note 1 t j = 125 cv igbt with diode symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c50a i f110 t c = 110 c (50n60b2d1 diode) 38 a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 80 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque, to-264 1.13/10 nm/lb.in. weight to-264 10 g plus247 6 g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter tab = collector features ? low on-state voltage igbt and anti-parallel diode in one package ? high current handling capability ? mos gate turn-on for drive simplicity applications ? lighting controls ? heating controls ? ac/dc relays advantages ? space savings (two devices in one package) ? easy to mount with 1 screw or spring clip g c e to-264 (ixgk) ds99275(12/04) plus247 (ixgx) v ces = 600 v i c25 = 75 a v ce(sat) = 1.4 v (tab) (tab) ixgk 50n60a2d1 ixgx 50n60a2d1 advance technical data c e low saturation voltage
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 40 a; v ce = 10 v, 40 55 s note 1 c ies 3500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 220 pf c res 50 pf q g 140 nc q ge i c = 40 a, v ge = 15 v, v ce = 0.5 v ces 23 nc q gc 44 nc t d(on) 20 ns t ri 25 ns t d(off) 360 ns t fi 250 ns e off 2.0 mj t d(on) 20 ns t ri 25 ns e on 1.0 mj t d(off) 290 ns t fi 600 ns e off 4.1 mj r thjc 0.31 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 50 a, v ge = 15 v v ce = 480 v, r g = r off = 5.0 ? inductive load, t j = 125 c i c = 50 a, v ge = 15 v v ce = 480 v, r g = r off = 5.0 ? plus247 outline dim. mil limeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) ixgk 50n60a2d1 ixgx 50n60a2d1 to-264 outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 50 a, v ge = 0 v, 1.2 v note 1 t j = 150 c 0.9 v r thjc 0.65 k/w note 1: pulse test, t 300 s, duty cycle 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2004 ixys all rights reserved ixgk 50n60a2d1 ixgx 50n60a2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgk 50n60a2d1 ixgx 50n60a2d1
? 2004 ixys all rights reserved ixgk 50n60a2d1 ixgx 50n60a2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgk 50n60a2d1 ixgx 50n60a2d1
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